Selling high-power GaN/LDMOS for 5G, WPT, and ISM bands.
5G base station uses 450W with integrated GaN HEMT, providing 55W power with 9dB backoff.
Farad has started handling products from Innogration Technologies (China), an ISO9000/ISO14000 certified manufacturer that designs and manufactures HF and high-frequency GaN/LDMOS power transistors. They have numerous achievements in semiconductor manufacturing equipment, industrial microwave amplifiers and generators, and applications such as 4G/5G communications in Japan and around the world. Aiming for high efficiency and high output, they offer a 390W GaN HEMT in the 2.45GHz band and a 100W GaN Doherty module in the 5GHz band, compatible with various packages. *For more details, please download the PDF document or feel free to contact us.
- Company：ファラッド
- Price：Other
